2N222 Amplifier Transistors Datasheet

2N222 Datasheet, PDF, Equivalent


Part Number

2N222

Description

Amplifier Transistors

Manufacture

Motorola

Total Page 6 Pages
Datasheet
Download 2N222 Datasheet


2N222
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by P2N2222A/D
Amplifier Transistors
NPN Silicon
COLLECTOR
1
2
BASE
P2N2222A
3
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
75 Vdc
6.0 Vdc
600 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 Watts
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
Thermal Resistance, Junction to Case
RqJC
83.3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current
(VCE = 10 V)
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
ICBO
IEBO
ICEO
IBEX
40
75
6.0
Max Unit
— Vdc
— Vdc
— Vdc
10 nAdc
µAdc
0.01
10
10 nAdc
10 nAdc
20 nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1

2N222
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
Collector – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base – Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
Storage Time
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
Symbol
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
rbCc
NF
td
tr
ts
tf
Min
35
50
75
35
100
50
40
0.6
300
2.0
0.25
50
75
5.0
25
Max Unit
300
Vdc
0.3
1.0
Vdc
1.2
2.0
— MHz
8.0 pF
25 pF
k
8.0
1.25
X 10– 4
8.0
4.0
300
375
mmhos
35
200
150 ps
4.0 dB
10 ns
25 ns
225 ns
60 ns
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Features MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by P2N2222A/D Ampl ifier Transistors NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER P2N2222A MAXIMUM RATINGS Rating Collector – Emitter Vo ltage Collector – Base Voltage Emitte r – Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total De vice Dissipation @ TC = 25°C Derate ab ove 25°C Operating and Storage Junctio n Temperature Range Symbol VCEO VCBO VE BO IC PD PD TJ, Tstg Value 40 75 6.0 60 0 625 5.0 1.5 12 – 55 to +150 Unit Vd c Vdc Vdc mAdc mW mW/°C Watts mW/°C C 1 2 3 CASE 29–04, STYLE 17 TO–9 2 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Jun ction to Ambient Thermal Resistance, Ju nction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHAR ACTERISTICS (TA = 25°C unless otherwis e noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = .
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