Document
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
2N2221A 2N2221AL 2N2221AUA 2N2221AUB 2N2221AUBC * * Available to JANS quality level only.
2N2222A 2N2222AL 2N2222AUA 2N2222AUB 2N2222AUBC *
LEVELS
JAN JANTX JANTXV JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +25°C Operating & Storage Junction Temperature Range
VCEO VCBO VEBO
IC PT Top, Tstg
50 75 6.0 800 0.5 -65 to +200
Vdc Vdc Vdc mAdc W °C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Ambient
2N2221A, L 2N2221AUA 2N2221AUB, UBC
2N2222A, L 2N2222AUA 2N2222AUB, UBC
RθJA
Note: Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above TA > +37.5°C
2. Derate linearly 4.76mW/°C above TA > +63.5°C
Max.
325 210 325
Unit °C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 75Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 6.0Vdc VEB = 4.0Vdc
Collector-Emitter Cutoff Current VCE = 50Vdc
Symbol
Min. Max. Unit
V(BR)CEO ICBO IEBO ICES
50
Vdc
10 μAdc 10 ηAdc
10 μAdc 10 ηAdc 50 ηAdc
T4-LDS-0060 Rev. 2 (100247)
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB 2N2221AUBC, 2N2222AUBC (UBC = Ceramic Lid Version)
Page 1 of 6
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions ON CHARACTERISTICS (2)
Symbol
Forward-Current Transfer Ratio IC = 0.1mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC
Min.
30 50
Max.
Unit
IC = 1.0mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC
35 150 75 325
IC = 10mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC
hFE
40 100
IC = 150mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC
40 120 100 300
IC = 500mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc
Base-Emitter Voltage
IC = 150mAdc, IB = 15mAdc IC = 500mAdc, IB = 50mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC 2N2222A, L, UA, UB, UBC
Magnitude of Small–Signal Short-Circuit Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ .