2N2222A

LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME 2N2222A HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 5.33 (0.210) 4.32 (0.170) FEATURES SILICON PLANAR EPITAXIAL NPN TRANSISTOR HIGH SPEED SATURATED SWITCHING ALSO AVAILABLE IN CERAMIC SURFACE MOUNT PACKAGE 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 METAL PACKAGE Underside View PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 75V 40V 6V 800mA 0.5mW 2.28mW / °C 1.2W 6.85mW / °C –65 to +200°C Prelim. 3/96 Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 12.7 (0.500) min. LAB ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Parameter V(BR)CEO V(BR)CBO V(BR)EBO ICEX ICBO IEBO IBL OFF CHARACTERISTICS Collector – Emitter Sustaining Voltage Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector Cut-off Current Collector – Base Cut-off Current Emitter Cut-off Current (IC = 0) Base Current ON CHARACTERISTICS VCE(sat)1 VBE(sat)1 Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage IC = 150mA IC = 500mA IC = 150mA IC = 500m...