SWITCHING TRANSISTOR. 2N2222A Datasheet

2N2222A TRANSISTOR. Datasheet pdf. Equivalent


Microsemi 2N2222A
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC *
* Available to JANS quality level only.
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC *
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ TA = +25°C
Operating & Storage Junction Temperature Range
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
50
75
6.0
800
0.5
-65 to +200
Vdc
Vdc
Vdc
mAdc
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2221AUA
2N2221AUB, UBC
2N2222A, L
2N2222AUA
2N2222AUB, UBC
RθJA
Note: Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above TA > +37.5°C
2. Derate linearly 4.76mW/°C above TA > +63.5°C
Max.
325
210
325
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 10mAdc
Collector-Base Cutoff Current
VCB = 75Vdc
VCB = 60Vdc
Emitter-Base Cutoff Current
VEB = 6.0Vdc
VEB = 4.0Vdc
Collector-Emitter Cutoff Current
VCE = 50Vdc
Symbol
Min. Max. Unit
V(BR)CEO
ICBO
IEBO
ICES
50
Vdc
10 μAdc
10 ηAdc
10 μAdc
10 ηAdc
50 ηAdc
T4-LDS-0060 Rev. 2 (100247)
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
Page 1 of 6


2N2222A Datasheet
Recommendation 2N2222A Datasheet
Part 2N2222A
Description NPN SILICON SWITCHING TRANSISTOR
Feature 2N2222A; TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 Devices 2N2221A 2N22.
Manufacture Microsemi
Datasheet
Download 2N2222A Datasheet




Microsemi 2N2222A
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (2)
Symbol
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
Min.
30
50
Max.
Unit
IC = 1.0mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
35 150
75 325
IC = 10mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
hFE
40
100
IC = 150mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
40 120
100 300
IC = 500mAdc, VCE = 10Vdc
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
Base-Emitter Voltage
IC = 150mAdc, IB = 15mAdc
IC = 500mAdc, IB = 50mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N2221A, L, UA, UB, UBC
2N2222A, L, UA, UB, UBC
Magnitude of Small–Signal Short-Circuit
Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz f 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz f 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
See figure 8 of MIL-PRF-19500/255
Turn-Off Time
See Figure 9 of MIL-PRF-19500/255
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle 2.0%.
VCE(sat)
VBE(sat)
Symbol
hfe
|hfe|
Cobo
Cibo
Symbol
ton
toff
20
30
0.6
Min.
30
50
2.5
Min.
0.3
1.0
1.2
2.0
Max.
Vdc
Vdc
Unit
8.0 pF
25 pF
Max.
35
300
Unit
ηs
ηs
T4-LDS-0060 Rev. 2 (100247)
Page 2 of 6



Microsemi 2N2222A
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length
of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm)
below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to
tab at MMC.
7. Dimension LU applies between L1 and L2. Dimension LD applies
between L2 and LL minimum. Diameter is uncontrolled in L1 and
beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ASME Y14.5M, diameters are equivalent to φx
symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
13. For L suffix devices, dimension LL = 1.5 inches (38.10 mm) min.
and 1.75 inches (44.45 mm) max.
Symbol
CD
CH
HD
LC
LD
LL
LU
L1
L2
P
Q
TL
TW
r
α
Dimensions
Inches
Millimeters
Min Max Min Max
.178 .195 4.52 4.95
.170 .210 4.32 5.33
.209 .230 5.31 5.84
.100 TP
2.54 TP
.016 .021 0.41 0.53
.500 .750 12.70 19.05
.016 .019 0.41 0.48
.050 1.27
.250 6.35
.100 2.54
.030 0.76
.028 .048 0.71 1.22
.036 .046 0.91 1.17
.010 0.25
45° TP
45° TP
1, 2, 9, 11, 12, 13
Note
6
7,8
7,8,13
7,8
7,8
7,8
5
3,4
3
10
6
T4-LDS-0060 Rev. 2 (100247)
FIGURE 1. Physical dimensions (similar to TO-18).
Page 3 of 6







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