2N2857
MECHANICAL DATA Dimensions in mm (inches)
4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178)
NPN TRANSISTOR
5.33 (0.210) 4.32 (0.170)
FEATURES
• SILICON NPN TRANSISTOR
12.7 (0.500) min.
0.48 (0.019) 0.41 (0.016) dia.
APPLICATIONS:
• AMPLIFIER, OSCILLATOR AND CONVERTER APPLICATIONS UP TO 500MHz
2.54 (0.100) Nom.
4 3 2 1
TO-72 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TSTG , TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Total Device Dissipation @ TA =25°C Total Device Dissipation @ TC =25°C Operating and Storage Temperature Range 30V 15V 2.5V 40mA 200mW 300mW –65 to 200°C
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail
[email protected] Website http://www.semelab.co.uk
Prelim. 7/98
2N2857
ELECTRICAL CHARACTERISTICS
Parameter
V(BR)CBO* V(BR)CEO V(BR)EBO ICBO hFE NF CEBO Gpe rbB’C’b’c fT Cre Pc Collector – Base Breakdown Voltage Emitter – Base Breakdown Voltage Collector – Base Cut-off Current DC Current Gain Noise Figure Emitter Base Capacitance Power Gain (Neutralised) Feedback Time Constant Transition Frequency
(TA = 25°C unless otherwise stated)
Test Conditions
IC = 1µA IE = 10µA VCB = 15V IE = 0 VCE = 1V VCE = 6V f = 450MHz VEB = 0.5V f = 1 MHz VCE = 6V f = 450MHz VCB = 6V f = 31.9MHz VCE = 6V f = 100 MHz VCE = 10V f = 1 MHz VCB = 10V f = 500MHz IC = 12mA IC = 5mA IC = 0 IC = 1.5mA RG = 50Ω IC = 2mA Tamb= 150°C IC = 3mA IC = 1.5mA RG = 50Ω IC = 0 IE = 0 IB = 0 IC = 0
Min.
30 15 2.5
Typ.
Max. Unit
V 10 1 nA µA — dB pF 19 dB ps GHz pF mW
Collector – Emitter Breakdown Voltage IC = 3mA
30 3.8 1.4 12.5 4 1 0.6 30 7
150 4.5
15 1.9 1
Reverse Capacitance Oscillator Power Output
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. e-mail
[email protected] Website http://www.semelab.co.uk
Prelim. 7/98
.