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2N2857 Dataheets PDF



Part Number 2N2857
Manufacturers Microsemi
Logo Microsemi
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet 2N2857 Datasheet2N2857 Datasheet (PDF)

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applicatio.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for UHF equipment. Applications include low noise amplifier; oscillator, and mixer applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 30 2.5 40 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 200 1.14 mWatts mW/ ºC MSC1066.PDF 3-10-99 2N2857 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVCBO BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 3.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC=1.0 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) 15 30 2.5 Value Typ. Max. .01 Unit Vdc Vdc Vdc µA (on) HFE DC Current Gain (IC = 3.0 mAdc, VCE = 1.0 Vdc) 30 150 DYNAMIC Symbol fT NF Test Conditions Min. Current-Gain - Bandwidth Product (IC = 5.0 mAdc, VCE = 6 Vdc, f = 100 MHz) Noise Figure (50 Ohms) (IC = 1.5 mAdc, VCE = 6 Vdc, f = 500 MHz) Value Typ. 1.6 5.5 Max. Unit GHz dB MSC1066.PDF 3-10-99 2N2857 FUNCTIONAL Symbol Test Conditions Min. Maximum Unilateral Gain Maximum Available Gain Insertion Gain IC = 12 mAdc, VCE = 10Vdc, f = 500 MHz IC = 12 mAdc, VCE = 10Vdc, f = 500 MHz IC = 12 mAdc, VCE = 10Vdc, f = 500 MHz Value Typ. 13 13.5 10.5 Max. Unit dB dB dB G U max 9.5 MAG 2 |S21| Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 12 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| 0.457 0.291 0.233 0.212 0.184 0.173 0.192 0.165 0.261 0.083 ∠φ -44 -56 -60 -68 -76 -79 -89 -96 -121 149 S21 |S21| 12.49 8.06 5.3 3.88 3.36 2.97 2.39 1.89 2.72 1.27 ∠φ 122 101 89 80 80 69 61 57 60 39 S12 |S12| 0.012 0.018 0.024 0.032 0.037 0.043 0.044 0.055 0.068 0.064 ∠φ 63 55 81 55 49 46 44 43 29 18 S22 |S22| 0.823 0.712 0.728 0.723 0.711 0.717 0.72 0.731 0.746 0.749 ∠φ -23 -35 -46 -60 -73 -86 -100 -115 -131 -148 MSC1066.PDF 3-10-99 2N2857 . MSC1066.PDF 3-10-99 .


2N2857 2N2857 74F1779


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