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74HC2G126 Dataheets PDF



Part Number 74HC2G126
Manufacturers Philips
Logo Philips
Description Dual buffer/line driver
Datasheet 74HC2G126 Datasheet74HC2G126 Datasheet (PDF)

INTEGRATED CIRCUITS DATA SHEET 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state Product specification 2003 Mar 03 Philips Semiconductors Product specification Dual buffer/line driver; 3-state FEATURES • Wide operating voltage from 2.0 to 6.0 V • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • Very small 8 pins package • Output capability: bus driver • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A .

  74HC2G126   74HC2G126



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INTEGRATED CIRCUITS DATA SHEET 74HC2G126; 74HCT2G126 Dual buffer/line driver; 3-state Product specification 2003 Mar 03 Philips Semiconductors Product specification Dual buffer/line driver; 3-state FEATURES • Wide operating voltage from 2.0 to 6.0 V • Symmetrical output impedance • High noise immunity • Low power dissipation • Balanced propagation delays • Very small 8 pins package • Output capability: bus driver • ESD protection: – HBM EIA/JESD22-A114-A exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V • Specified from −40 to +85 °C and −40 to +125 °C. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = rf ≤ 6.0 ns. 74HC2G126; 74HCT2G126 DESCRIPTION The 74HC2G/HCT2G126 is a high-speed Si-gate CMOS device. The 74HC2G/HCT2G126 provides one non-inverting buffer/line driver with 3-state output. The 3-state output is controlled by the output enable input pin (OE). A LOW at pin OE causes the output as assume a high-impedance OFF-state. The bus driver output currents are equal compared to the 74HC/HCT126. TYPICAL SYMBOL tPHL/tPLH CI CO CPD PARAMETER propagation delay nA to nY input capacitance output capacitance power dissipation capacitance output enabled; notes 1 and 2 per buffer output disabled; notes 1 and 2 CONDITIONS HC2G CL = 15 pF; VCC = 5 V 10 1 1.5 11 1 1 1.5 11 1 HCT2G 12 ns pF pF pF pF UNIT Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD = CPD × VCC2 × fi × N + Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total switching outputs; Σ(CL × VCC2 × fo) = sum of the outputs. 2. For the 74HC2G126 the condition is VI = GND to VCC. For the 74HCT2G126 the condition is VI = GND to VCC − 1.5 V. 2003 Mar 03 2 Philips Semiconductors Product specification Dual buffer/line driver; 3-state FUNCTION TABLE See note 1. INPUT nOE H H L Note 1. H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. ORDERING INFORMATION TYPE NUMBER 74HC2G126DP 74HCT2G126DP 74HC2G126DC 74HCT2G126DC PIN DESCRIPTION PIN 1 2 3 4 5 6 7 8 1A 2Y GND 2A 1Y 2OE VCC SYMBOL 1OE output enable input data input data output ground (0 V) data input data output output enable input supply voltage TEMPERATURE RANGE −40 to +125 °C −40 to +125 °C −40 to +125 °C −40 to +125 °C nA L H X 74HC2G126; 74HCT2G126 OUTPUT nY L H Z PACKAGE PINS 8 8 8 8 PACKAGE TSSOP8 TSSOP8 VSSOP8 VSSOP8 MATERIAL plastic plastic plastic plastic CODE SOT505-2 SOT505-2 SOT765-1 SOT765-1 MARKING H26 T26 H26 T26 DESCRIPTION 2003 Mar 03 3 Philips Semiconductors Product specification Dual buffer/line driver; 3-state 74HC2G126; 74HCT2G126 handbook, halfpage handbook, halfpage 1OE 1 1A 2 8 VCC 7 2OE 2 1 5 7 1A 1OE 2A 2OE 1Y 6 2Y 3 126 2Y 3 GND 4 MNA945 6 1Y 5 2A MNA946 Fig.1 Pin configuration. Fig.2 Logic symbol. handbook, halfpage 2 1 5 3 7 MNA947 1 EN1 6 handbook, halfpage A Y OE MNA127 Fig.3 Logic symbol (IEEE/IEC). Fig.4 Logic diagram (one driver). 2003 Mar 03 4 Philips Semiconductors Product specification Dual buffer/line driver; 3-state RECOMMENDED OPERATING CONDITIONS 74HC2G126; 74HCT2G126 74HC2G126 SYMBOL VCC VI VO Tamb PARAMETER supply voltage input voltage output voltage operating ambient temperature input rise and fall times see DC and AC characteristics per device VCC = 2.0 V VCC = 4.5 V VCC = 6.0 V CONDITIONS MIN. 2.0 0 0 −40 TYP. 5.0 − − +25 MAX. 6.0 VCC VCC +125 74HCT2G126 UNIT MIN. 4.5 0 0 −40 TYP. 5.0 − − +25 MAX. 5.5 VCC VCC +125 V V V °C tr, tf − − − − 6.0 − 1000 500 400 − − − − 6.0 − − 500 − ns ns ns LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK IOK IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. Above 110 °C the value of PD derates linearly with 8 mW/K. PARAMETER supply voltage input diode current output diode current output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from −40 to +125 °C; note 2 VI < −0.5 V or VI > VCC + 0.5 V; note 1 VO < −0.5 V or VO > VCC + 0.5 V; note 1 −0.5 V < VO < VCC + 0.5 V; note 1 note 1 CONDITIONS MIN. −0.5 − − − − −65 − MAX. +7.0 ±20 ±20 25 50 +150 300 UNIT V mA mA mA mA °C mW 2003 Mar 03 5 Philips Semiconductors Product specification Dual buffer/line driver; 3-state DC CHARACTERISTICS 74HC2G126; 74HCT2G126 Type 74HC2G126 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = −40 to +85 °C VIH HIGH-level input voltage 2.0 4.5 6.0 VIL LOW-level input voltage 2.0 4.5 6.0 VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA IO = −20 µA IO = −20 µA IO = −6.0 mA IO = −7.8 mA VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA IO = 20 µA IO = 20 µA IO = 6.0 mA IO = 7.8 mA ILI .


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