(PDF) LM310 Datasheet PDF | National Semiconductor





LM310 Datasheet PDF

Part Number LM310
Description Voltage Follower
Manufacture National Semiconductor
Total Page 16 Pages
PDF Download Download LM310 Datasheet PDF

Features: Datasheet pdf LM110 LM210 LM310 Voltage Follower Nove mber 1994 LM110 LM210 LM310 Voltage Fo llower General Description The LM110 se ries are monolithic operational amplifi ers internally connected as unity-gain non-inverting amplifiers They use super -gain transistors in the input stage to get low bias current without sacrifici ng speed Directly interchangeable with 101 741 and 709 in voltage follower app lications these devices have internal f requency compensation and provision for offset balancing The LM110 series are useful in fast sample and hold circuits active filters or as general-purpose b uffers Further the frequency response i s sufficiently better than standard IC amplifiers that the followers can be in cluded in the feedback loop without int roducing instability They are plug-in r eplacements for the LM102 series voltag e followers offering lower offset volta ge drift bias current and noise in addi tion to higher speed and wider operatin g voltage range The LM110 is specified over a temperature range.

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LM310 datasheet
November 1994
LM110 LM210 LM310 Voltage Follower
General Description
The LM110 series are monolithic operational amplifiers in-
ternally connected as unity-gain non-inverting amplifiers
They use super-gain transistors in the input stage to get low
bias current without sacrificing speed Directly interchange-
able with 101 741 and 709 in voltage follower applications
these devices have internal frequency compensation and
provision for offset balancing
The LM110 series are useful in fast sample and hold cir-
cuits active filters or as general-purpose buffers Further
the frequency response is sufficiently better than standard
IC amplifiers that the followers can be included in the feed-
back loop without introducing instability They are plug-in
replacements for the LM102 series voltage followers offer-
ing lower offset voltage drift bias current and noise in addi-
tion to higher speed and wider operating voltage range
The LM110 is specified over a temperature range b55 C s
TA s a125 C the LM210 from b25 C s TA s a85 C and
the LM310 from 0 C s TA s a70 C
Features
Y Input current
Y Small signal bandwidth
Y Slew rate
Y Supply voltage range
10 nA max over temperature
20 MHz
30 V ms
g5V to g18V
Schematic Diagram
C1995 National Semiconductor Corporation TL H 7761
TL H 7761 – 1
RRD-B30M115 Printed in U S A

LM310 datasheet
Absolute Maximum Ratings
If Military Aerospace specified devices are required
please contact the National Semiconductor Sales
Office Distributors for availability and specifications
(Note 6)
Supply Voltage
g18V
Power Dissipation (Note 1)
500 mW
Input Voltage (Note 2)
g15V
Output Short Circuit Duration (Note 3)
Indefinite
Operating Temperature Range
LM110
LM210
LM310
b55 C to a125 C
b25 C to a85 C
0 C to a70 C
Storage Temperature Range
b65 C to a150 C
Lead Temperature (Soldering 10 sec )
260 C
Soldering Information
Dual-In-Line Package
Soldering (10 sec )
Small Outline Package
Vapor Phase (60 sec )
Infrared (15 sec )
260 C
215 C
220 C
See AN-450 ‘‘Surface Mounting Methods and Their Effect
on Product Reliability’’ for other methods of soldering sur-
face mount devices
ESD rating to be determined
Electrical Characteristics (Note 4)
Parameter
Conditions
LM110
LM210
LM310
Units
Min Typ Max Min Typ Max Min Typ Max
Input Offset Voltage
Input Bias Current
Input Resistance
Input Capacitance
TA e 25 C
TA e 25 C
TA e 25 C
1010
15
10
1012
15
40
30
1010
15
10
1012
15
40
30
1010
25
20
1012
15
75
70
mV
nA
X
pF
Large Signal Voltage TA e 25 C VS e g15V
Gain
VOUT e g10V RL e 8 kX
Output Resistance TA e 25 C
Supply Current
TA e 25 C
Input Offset Voltage
0 999 0 9999
0 999 0 9999
0 999 0 9999
0 75 2 5
39 55
60
0 75 2 5
39 55
60
0 75 2 5
39 55
10
VV
X
mA
mV
Offset Voltage
Temperature Drift
Input Bias Current
b55 C s TA s a85 C
a85 s TA s 125 C
0 C s TA s a70 C
6
12
10
6
10
mV C
mV C
10 mV C
10 nA
Large Signal Voltage VS e g15V VOUT e g10V 0 999
Gain
RL e 10 kX
Output Voltage
Swing (Note 5)
VS e g15V RL e 10 kX
g10
0 999
g10
0 999
g10
VV
V
Supply Current
TA e 125 C
20 40
20 40
mA
Supply Voltage
Rejection Ratio
g5V s VS s g18V
70 80
70 80
70 80
dB
Note 1 The maximum junction temperature of the LM110 is 150 C of the LM210 is 100 C and of the LM310 is 85 C For operating at elevated temperatures
devices in the HO8 package must be derated based on a thermal resistance of 165 C W junction to ambient or 22 C W junction to case The thermal resistance
of the dual-in-line package is 100 C W junction to ambient
Note 2 For supply voltages less than g15V the absolute maximum input voltage is equal to the supply voltage
Note 3 Continuous short circuit for the LM110 and LM210 is allowed for case temperatures to 125 C and ambient temperatures to 70 C and for the LM310 70 C
case temperature or 55 C ambient temperature It is necessary to insert a resistor greater than 2 kX in series with the input when the amplifier is driven from low
impedance sources to prevent damage when the output is shorted RS e 5k min 10k typical is recommended for dynamic stability in all applications
Note 4 These specifications apply for g5V s VS s g18V and b55 C s TA 125 C for the LM110 b25 C s TA s 85 C for the LM210 and 0 C s TA s 70 C for
the LM310 unless otherwise specified
Note 5 Increased output swing under load can be obtained by connecting an external resistor between the booster and Vb terminals See curve
Note 6 Refer to RETS110X for LM110H LM110J military specifications
Application Hint
The input must be driven from a source impedance of typically 10 kX (5 kX min ) to maintain stability The total source
impedance will be reduced at high frequencies if there is stray capacitance at the input pin In these cases a 10 kX resistor
should be inserted in series with the input physically close to the input pin to minimize the stray capacitance and prevent
oscillation
2





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