SO5401

SO5401 SMALL SIGNAL PNP TRANSISTORS Type SO5401 s Marking P33 s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE AND HIGH VOLTAGE AMPLIFIER 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO I CM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 oC Storage Temperature Max. O perating Junction Temperature Value -160 -150 -5 -0.6 200 -65 to 150 150 Uni t V V V A mW o o C C October 1997 1/4 SO5401 THERMAL DATA R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IC = 0) Test Cond ition s V CB = -120 V V EB = -3 V I C = -100 µ A -160 Min. Typ . Max. -50 -50 Un it nA nA V V ( BR)CBO ∗ Collector-Emitter Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage DC Current G ain I C = -1 mA -150 V I C = -10 nA -5 V V CE(sat )∗ V BE(s at)∗ h FE∗ I C = -10 mA I C = -50 mA I C = -10 mA ...