SOA56

SOA56 SMALL SIGNAL PNP TRANSISTOR Type SOA56 s Marking 2GT s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION NPN COMPLEMENTS IS SOA06 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot T stg Tj March 1996 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature o Value -80 -80 -4 -0.5 350 -65 to 150 150 Unit V V V A mW o o C C 1/4 SOA56 THERMAL DATA R t hj- amb Thermal Resistance Junction-Ambient Max 350 o C/W Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IE = 0) Test Cond ition s V CB = -80 V V CE = -60 V I C = -1 mA -80 Min. Typ . Max. -100 -100 Un it nA nA V V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter O n Voltage DC Current G ain Transition F requency I E = -100 µA -4 V V CE(sat )∗ V BE(on) ∗ h FE∗ fT I C = -100 mA I C = -100 mA I C = -10 mA I C = -100 mA IB = -10 mA V CE = -1 V V CE = -1 V V CE = -1 V 50 50 50 -0.25 -1.2 V V I C = -10 mA V CE = -2 V f = 100 MH...