MP6901

MP6901 TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1) MP6901 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm · · · · Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (6 devices operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = ±4 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (6 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C Tc = 25°C PT VIsol Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 5 4 6 0.4 3.0 5.0 W 25 1000 150 −55 to 150 V °C °C PNP −100 −80 −5 −4 −6 −0.4 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-32B1D Weight: 6.0 g (typ.) Array Configuration R1 R2 4 7 3 10 6 9 12 2 R1 R2 1 4 8 11 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2002-11-20 MP6901 Thermal Characteristics Characteristics Thermal resistance of junction to ambient (6 devices operation, Ta = 25°C) Thermal resistance of junction to case (6 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) ΣRth (j-c) 5.0 °C/W Symbol Max Unit ΣRth (j-a) 25 °C/W TL 260 °C Electr...