T2800

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by T2800/D Triacs Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. Blocking Voltage to 600 Volts All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability T2800 — Four Quadrant Gating MT2 T2800 SERIES TRIACs 8 AMPERES RMS 200 thru 600 VOLTS MT1 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to +100°C, Gate Open) T2800 B D M RMS On-State Current (Conduction Angle = 360°) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = +80°C) Circuit Fusing (t = 8.3 ms) Peak Gate Power (Pulse Width = 1 µs) Average Gate Power Peak Gate Trigger Current (Pulse Width = 1 µs) Operating Junction Temperature Range Storage Temperature Range (TC = +80°C) IT(RMS) ITSM I2t PGM PG(AV) IGTM TJ Tstg Symbol VDRM 200 400 600 8 100 40 16 0.35 4 –40 to +100 –40 to +150 Amps Amps A2s Watts Watt Amps °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.2 Unit °C/W 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage rat...