Bidirectional Thyristors. T2800D Datasheet

T2800D Thyristors. Datasheet pdf. Equivalent

T2800D Datasheet
Recommendation T2800D Datasheet
Part T2800D
Description Silicon Bidirectional Thyristors
Feature T2800D; T2800D Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applicati.
Manufacture ON Semiconductor
Datasheet
Download T2800D Datasheet




ON Semiconductor T2800D
T2800D
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies.
Blocking Voltage to 400 Volts
All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
Four Quadrant Gating
Device Marking: Logo, Device Type, e.g., T2800D, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to +125°C, Gate Open)
VDRM,
VRRM
400
Unit
Volts
On–State RMS Current
IT(RMS) 8.0 Amps
(All Conduction Angles, TC = +80°C)
Peak Non–Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = +80°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100 Amps
40 A2s
Peak Gate Power
(Pulse Width = 10 µs, TC = +80°C)
PGM
16 Watts
Average Gate Power (t = 8.3 ms,
TC = +80°C)
PG(AV) 0.35 Watt
Peak Gate Current
(Pulse Width = 10 µs, TC = +80°C)
IGM
4.0 Amps
Operating Junction Temperature Range
TJ
– 40 to
+125
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
8 AMPERES RMS
400 VOLTS
MT2
MT1
G
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
T2800D
TO220AB
500/Box
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 3
1
Publication Order Number:
T2800/D



ON Semiconductor T2800D
T2800D
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Thermal Resistance, Junction to Case
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
RθJC
TL
2.2
260
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Max
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
"Peak On-State Voltage(1)
(IT = 30 A Peak)
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+)
TC = 25°C
TC = 100°C
IDRM,
IRRM
VTM
IGT
— — 10
— — 2.0
— 1.7 2.0
— 10 25
— 20 60
— 15 25
— 30 60
Gate Trigger Voltage (Continuous dc) (All Quadrants)
(VD = 12 Vdc, RL = 100 Ohms)
Gate Non–Trigger Voltage (Continuous dc)
(VD = 12 V, RL = 100 Ohms, TC = 100°C)
"Holding Current
(VD = 12 Vdc, Initiating Current = 200 mA, Gate Open)
Gate Controlled Turn-On Time
(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)
DYNAMIC CHARACTERISTICS
VGT
VGD
IH
tgt
— 1.25 2.5
0.2 —
— 15 30
— 1.6 —
Critical Rate-of-Rise of Commutation Voltage
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
(1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
dv/dt(c)
dv/dt
— 10 —
60 — —
Unit
°C/W
°C
Unit
µA
mA
Volts
mA
Volts
Volts
mA
µs
V/µs
V/µs
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2



ON Semiconductor T2800D
T2800D
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Parameter
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
IRRM at VRRM
on state
IH
Quadrant 3
MainTerminal 2 –
VTM
VTM
Quadrant 1
MainTerminal 2 +
IH
off state
+ Voltage
IDRM at VDRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
IGT –
(–) IGT
GATE
MT1
REF
(–) MT2
(+) IGT
GATE
MT1
REF
(–) MT2
Quadrant I
+ IGT
Quadrant III
(–) IGT
GATE
MT1
REF
(+) IGT
GATE
MT1
REF
Quadrant IV
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in–phase signals (using standard AC lines) quadrants I and III are used.
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3







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