FTD2019A

Ordering number : ENN7911 FTD2019A FTD2019A Features N-Channel Silicon MOSFET Transistor Load Switching Applications Low ON-resistance. 2.5V drive. Mount height 1.1mm. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1000mm2!0.8mm)1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings 30 ±12 6 40 1.3 1.4 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS= ±8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=4V ID=3A, VGS=3.1V ID=3A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz Ratings min 30 1 ±10 0.5 7.8 13 19 21 23 1430 195 38 26 32 34 1.3 typ max Unit V µA µA V S mΩ mΩ mΩ pF pF pF Marking : D2019A Continued on next page. Any and all SANYO products described or contained herein do not have specifications...