BAW156

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 BAW156 Low-leakage double diode Product specification Supersedes data of 1996 Mar 13 1999 May 11 Philips Semiconductors Product specification Low-leakage double diode FEATURES Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 µs Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATION Low-leakage current applications in surface mounted circuits. Top view handbook, 4 columns BAW156 PINNING PIN 1 2 3 cathode cathode common anode DESCRIPTION 2 1 2 3 3 MAM206 1 DESCRIPTION Epitaxial, medium-speed switching, double diode in a small SOT23 plastic SMD package. The diodes are in common anode configuration. Marking code: JZp = made in Hong Kong; JZt = made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF IFRM IFSM repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb ≤ 25 °C; note 1 − − − − −65 − 4 1 0.5 250 +150 150 A A A mW °C °C single diode loaded; note 1; see Fig.2 ...