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BAW27 Dataheets PDF



Part Number BAW27
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Small Signal Switching Diode
Datasheet BAW27 DatasheetBAW27 Datasheet (PDF)

www.vishay.com BAW27 Vishay Semiconductors Small Signal Switching Diode DESIGN SUPPORT TOOLS click logo to get started FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and industrial applications Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight.

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www.vishay.com BAW27 Vishay Semiconductors Small Signal Switching Diode DESIGN SUPPORT TOOLS click logo to get started FEATURES • Silicon epitaxial planar diode • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed switch and general purpose use in computer and industrial applications Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE BAW27 BAW27-TR or BAW27-TAP TYPE MARKING BAW27 CIRCUIT CONFIGURATION Single REMARKS Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward continuous current Average forward current Power dissipation tp = 1 μs VR = 0 l = 4 mm, TL = 45 °C l = 4 mm, TL ≤ 25 °C VRRM VR IFSM IF IF(AV) Ptot Ptot VALUE 75 60 4 600 300 440 500 THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Thermal resistance junction to ambient air Junction temperature Storage temperature range l = 4 mm, TL = constant RthJA Tj Tstg VALUE 350 175 -65 to +175 UNIT V V A mA mA mW mW UNIT K/W °C °C Rev. 1.8, 13-Jul-17 1 Document Number: 85548 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BAW27 Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. Forward voltage Reverse current Breakdown voltage Diode capacitance Reverse recovery time IF = 10 mA IF = 50 mA IF = 200 mA IF = 400 mA VR = 60 V VR = 60 V, Tj = 100 °C IR = 5 μA, tp/T = 0.01, tp = 0.3 ms VR = 0 V, f = 1 MHz, VHF = 50 mV IF = IR = 10 mA, iR = 0.1 x IR VF VF VF VF IR IR V(BR) CD trr 0.670 800 950 1120 75 MAX. 0.750 850 1000 1250 100 50 4 6 UNIT V mV mV mV nA μA V pF ns PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identification Ø 0.6 max. [0.024] Ø 0.4 min. [0.015] 1.7 [0.067] 1.3 [0.050] 26 min. [1.024] Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] Rev. 1.8, 13-Jul-17 2 Document Number: 85548 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/.


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