BAW56S

BAW 56S Silicon Switching Diode Array For high-speed switching applications Common anode Internal (galvanic) isolated Diodes in one package 4 5 6 2 1 3 VPS05604 Type BAW 56S Marking Ordering Code A1s Q62702-A1253 Pin Configuration Package 1/4 = C1 2/5 = C2 3/6 = A1/2 SOT-363 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 85 °C Junction temperature Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 70 70 200 4.5 250 150 65 ...+150 ≤ 530 ≤ 260 Unit V mA A mW °C VR VRM IF IFS Ptot Tj Tstg RthJA RthJS K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAW 56S Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 70 V mV I (BR) = 100 µA Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 2.5 µA nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics Diode capacitance - - 30 50 CD trr - - 1.5 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 Ω, measured at IR = 1mA Test circuit for reverse recovery time D.U.T. ΙF Oscillograph EHN00019 Pulse generator: tp = 100ns, D ...