BAW56T

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAW56T High-speed double diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 19 Philips Semiconductors Product specification High-speed double diode FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in e.g. surface mounted circuits. Marking code: A1. 1 2 BAW56T PINNING PIN 1 2 3 DESCRIPTION cathode 1 cathode 2 common anode DESCRIPTION Two high-speed switching diodes in a common anode configuration, fabricated in planar technology, in a very small rectangular SMD SOT416 (SC-75) package. handbook, halfpage 3 3 1 MAM369 2 Fig.1 Simplified outline (SOT416; SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS − − Ts = 90 °C; see Fig.2 single diode loaded both diodes loaded IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Ts = 90 °C; one diode loaded − − − − −65 − 4 1 0.5 170 +150 +150 A A A mW °C °C − − − 150 75 500 mA mA mA MIN. MAX. UNIT Per diode (unless otherwise specified) VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous fo...