BAW56W

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAW56W High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. 2 1 BAW56W PINNING PIN 1 2 3 DESCRIPTION cathode (k1) cathode (k2) common anode DESCRIPTION The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small SOT323 plastic SMD package. APPLICATIONS High-speed switching in e.g. surface mounted circuits. 3 MAM092 2 1 3 Top view Marking code: A1. Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current single diode loaded; note 1; see Fig.2 double diode loaded; note 1; see Fig.2 IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 − − − − −65 − 4 1 0.5 200 +150 150 A A A mW °C °C...