BAW56W

BAW 56W Silicon Switching Diode Array For high speed switching applications Common anode Type BAW 56W Marking Ordering Code A1s Q62702-A1031 Pin Configuration 1 = C1 2=C2 Package 3=A1/A2 SOT-323 Maximum Ratings per Diode Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total Power dissipation Symbol Values 70 70 200 4.5 250 mA A mW 150 - 65 ... + 150 ≤ 460 ≤ 190 °C Unit V VR VRM IF IFS Ptot Tj Tstg RthJA RthJS TS = 103 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu Semiconductor Group 1 Nov-28-1996 BAW 56W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics per Diode Breakdown voltage Values typ. max. Unit V(BR) 70 715 855 1000 1250 V I(BR) = 100 µA Forward voltage VF - IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current IR 2.5 30 50 µA VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C AC characteristics per Diode Diode capacitance CD 2 pF ns 6 VR = 0 V, f = 1 MHz Reverse recovery time trr IF = 10 mA, IR = 10 mA, RL = 100 Ω trr measured at 1 mA Semiconductor Group 2 Nov-28-1996 BAW 56W Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25°C 300 mA IF 200 TA 150 TS 100 50 0 0 20 40 60 80 100 120 s tp 160 Permissible Pulse Load Rth...