BAW78A

Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications q High breakdown voltage q Type BAW 78 A BAW 78 B BAW 78 C BAW 78 D Marking GA GB GC GD Ordering Code (tape and reel) Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration Package1) SOT-89 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 125 ˚C Junction temperature Symbol VR VRM IF IFM IFS Ptot Tj Values Unit BAW 78 A BAW 78 B BAW 78 C BAW 78 D 50 50 100 100 1 1 10 1 150 – 65 … + 150 W ˚C 200 200 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ 95 25 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW 78 A BAW 78 B BAW 78 C BAW 78 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA Test circuit for reverse recovery time CD trr – – 10 1 – – pF µs Values typ. max. Unit V(BR) 50 100 200 400 VF – – IR – – – – 1 50 – – 1.6 2 – – – – – – – – V V µA Pulse ...