Silicon Switching Diodes
BAW78A...BAW78D
Silicon Switching Diodes
Switching applications High breakdown voltage
1 2 3
2
VPS05162
2 1
EHA070...
Description
BAW78A...BAW78D
Silicon Switching Diodes
Switching applications High breakdown voltage
1 2 3
2
VPS05162
2 1
EHA07007
Type BAW78A BAW78B BAW78C BAW78D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Forward current Peak forward current
Marking GA GB GC GD 1=A 1=A 1=A 1=A
Pin Configuration 2=C 2=C 2=C 2=C 3 = n.c. 3 = n.c. 3 = n.c. 3 = n.c.
Package SOT89 SOT89 SOT89 SOT89
Symbol VR VRM
IF IFM IFS Ptot Tj Tstg
BAW 78A 50 50
BAW 78B 100 100
1 1 10 1
BAW 78C 200 200
BAW 78D 400 400
Unit V
A
Surge forward current, t = 1 s Total power dissipation , TS = 125 °C Junction temperature Storage temperature
W °C
150 -65 ... 150
Thermal Resistance Junction - soldering point1) RthJS
25
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
BAW78A...BAW78D
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW78A BAW78B BAW78C BAW78D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 CD 10 -
Unit max. V
typ.
V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 -
µA
pF µs
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = 10µs, D = 0.05, tr = 0.6ns, Ri = 50
Oscillograph:...
Similar Datasheet