Silicon Switching Diodes
BAW79A...BAW79D
Silicon Switching Diodes
Switching applications High breakdown voltage Common cathode
1 2 3
2
VP...
Description
BAW79A...BAW79D
Silicon Switching Diodes
Switching applications High breakdown voltage Common cathode
1 2 3
2
VPS05162
2 1 3
EHA07003
Type BAW79A BAW79B BAW79C BAW79D Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage
Forward current Peak forward current
Marking GE GF GG GH 1 = A1 1 = A1 1 = A1 1 = A1
Pin Configuration 2 = C1/2 2 = C1/2 2 = C1/2 2 = C1/2 3 = A2 3 = A2 3 = A2 3 = A2
Package SOT89 SOT89 SOT89 SOT89
Symbol VR VRM
IF IFM IFS Ptot Tj Tstg
BAW 79A 50 50
BAW 79B 100 100
1 1 10 1
BAW 79C 200 200
BAW 79D 400 400
Unit V
A
Surge forward current, t = 1 s Total power dissipation , TS = 115 °C Junction temperature Storage temperature
W °C
150 -65 ... 150
Thermal Resistance Junction - soldering point1) RthJS
35
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Aug-20-2001
BAW79A...BAW79D
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW79A BAW79B BAW79C BAW79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C
AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 CD 10 -
Unit max. V
typ.
V(BR) 50 100 200 400 VF IR IR 1.6 2 1 50 -
µA
pF µs
Test circuit for reverse recovery time
D.U.T.
ΙF
Oscillograph
EHN00019
Pulse generator: tp = 10µs, D =...
Similar Datasheet