BB102M

BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4(SOT-143mod) Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Note 1 Marking is “BW–”. Note 2 BB302M is individual type number of HITACHI BBFET. BB102M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Symbol Min V(BR)DSS V(BR)G1SS V(BR)G2SS 12 +10 ±10 — — 0.1 0.5 10 16 1.2 0.7 — 16 — Typ — — — — — — — 15 21 1.6 1.1 0.011 20 2.1 Max — — — +100 ±100 0.8 1.1 20 — 2.2 1.5 0.03 — 3.1 Unit V V V nA nA V V mA mS pF pF pF dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 9V, VG2S = 6V, ID = 100µA VDS = 9V, VG1S = 9V, ID = 100µA VDS = 9V, VG1 = 9V, VG2S = 6V RG = 560kΩ VDS = 9...