BB119

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BB119 Variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification Variable capacitance diode FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package C10: 17 pF; ratio: 1.3. handbook, halfpage k BB119 a MAM238 APPLICATIONS Automatic frequency control. DESCRIPTION The BB119 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 − MIN. MAX. 15 200 +150 150 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 15 V; see Fig.3 VR = 15 V; Tj = 150 °C; see Fig.3 f = 200 MHz; note 1 VR = 4 V; f = 1 MHz; see Figs 2 and 4 VR = 10 V; f = 1 MHz; see Figs 2 and 4 C d ( 4V ) -------------------C d ( 10V ) Note 1. VR = 4 V. f = 1 MHz MIN. − − − 20 − 1.3 TYP. − − 0.2 − 17 − MAX. UNIT 50 2 1.5 25 − − nA µA Ω pF pF 1996 May 03 2 Philips Semiconductors Product specification Variable capacitance diode GRAPH...