BB130

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D053 BB130 AM variable capacitance diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification AM variable capacitance diode FEATURES Matched to 3% Leaded plastic package C28: 18 pF; ratio: 27. APPLICATIONS Electronic tuning in AM radio applications VCO. DESCRIPTION The BB130 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD69 (TO-92 variant) leaded plastic package. handbook, halfpage BB130 k a MAM222 Fig.1 Simplified outline (SOD69; TO-92 variant) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 50 +125 +85 V mA °C °C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 30 V; see Fig.3 VR = 30 V; Tj = 85 °C; see Fig.3 f = 1 MHz; note 1 VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 28 V; f = 1 MHz; see Figs 2 and 4 C d ( 1V ) -------------------C d ( 28V ) ∆C d --------Cd Notes 1. VR = 1 V. 2. For a set of 2 diodes. f = 1 MHz MIN. − − − 450 12 23 TYP. − − − − − − − MAX. UNIT 50 300 2 550 21 − nA nA Ω pF pF capacitance matching VR = 1 to 28 ...