Low-voltage variable capacitance diode
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB143 Low-voltage variable capacitance diode
Preliminary specification 1999 ...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D319
BB143 Low-voltage variable capacitance diode
Preliminary specification 1999 May 12
Philips Semiconductors
Preliminary specification
Low-voltage variable capacitance diode
FEATURES Excellent linearity Ultra small plastic SMD package C4: 2.25 pF; ratio: 2.35 Low series resistance. APPLICATIONS Voltage controlled oscillators (VCO). DESCRIPTION The BB143 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package.
handbook, halfpage
BB143
PINNING PIN 1 2 cathode anode DESCRIPTION
1
2
L
MBL026
Marking code: L. Orientation of marking code as shown. Cathode side indicated by a bar.
Fig.1
Simplified outline (SOD523; SC-79) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRM IF Tstg Tj PARAMETER continuous reverse voltage peak reverse voltage continuous forward current storage temperature operating junction temperature in series with a 10 kΩ resistor CONDITIONS − − − −55 −55 MIN. 6 8 20 +150 +150 MAX. V V mA °C °C UNIT
ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance CONDITIONS VR = 6 V; see Fig.3 VR = 6 V; Tj = 85 °C; see Fig.3 f = 470 MHz; VR = 1 V VR = 1 V; f = 1 MHz; see Figs 2 and 4 VR = 4 V; f = 1 MHz; see Figs 2 and 4 C d ( 1V ) ----------------C d ( 4V ) capacitance ratio f = 1 MHz −...
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