BB212

DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D152 BB212 AM variable capacitance double diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03 Philips Semiconductors Product specification AM variable capacitance double diode FEATURES Leaded plastic package C8: 19 pF; ratio: 29. APPLICATIONS Electronic tuning in AM radio applications VCO. DESCRIPTION The BB212 is a variable capacitance double diode with a common cathode, fabricated in planar technology, and encapsulated in the TO-92 variant leaded plastic package. handbook, halfpage 1 BB212 PINNING PIN 1 2 3 anode (a1) common cathode anode (a2) DESCRIPTION 2 3 1 2 3 MAM223 Fig.1 Simplified outline (TO-92 variant) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 12 100 +100 +85 V mA °C °C PARAMETER MIN. MAX. UNIT 1996 May 03 2 Philips Semiconductors Product specification AM variable capacitance double diode ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL Per diode IR rs Cd reverse current diode series resistance diode capacitance VR = 10 V; see Fig.3 VR = 10 V; Tj = 85 °C; see Fig.3 f = 500 MHz; note 1 see Figs 2 and 4 VR = 0.5 V; f = 1 MHz VR = 3 V; f = 1 MHz VR = 5.5 V; f = 1 MHz VR = 8 V; f = 1 MHz C d ( 0.5V ) --------------------C d ( ...