BB301M

BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions. Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain BB301M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate 1 to source voltage Gate 2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 6 +6 –0 ±6 25 150 150 –55 to +150 Unit V V V mA mW °C °C 2 BB301M Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate 1 to source breakdown voltage Gate 2 to source breakdown voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS Min 6 +6 ±6 — — 0.4 0.4 10 15 Typ — — — — — — — 15 20 Max — — — +100 ±100 1.0 1.0 20 — Unit V V V nA nA V V mA mS Test conditions I D = 200 µA VG1S = VG2S = 0 I G1 = +10 µA VG2S = VDS = 0 I G2 = ±10 µA VG1S = VDS = 0 VG1S = +5 V VG2S = VDS = 0 VG2S = ±5 V VG1S = VDS = 0 VDS = 5 V, VG2S = 4 V I D = 100 µA VDS = 5 V, VG1S = 5 V I D = 100 µA VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 kΩ VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 100 kΩ, f = 1 kHz VDS = 5 V, VG1 = 5 V VG2S = 4 V, RG = 100 kΩ f = 1 MHz VDS = 5 V, VG1 = 5 V VG2S = 4 V RG = 100 kΩ, f = 200 MHz Gate 1 to source cutoff current I G1SS Ga...