BB304C

BB304C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-606C (Z) 4th. Edition August 1998 Features Build in Biasing Circuit; To reduce using parts cost & PC board space. High gain; (PG = 29 dB typ. at f = 200 MHz) Low noise characteristics; (NF = 1.2 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; CMPAK-4(SOT-343mod) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1 Marking is “DW–”. 2. BB304C is individual type number of HITACHI BBFET. BB304C Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 12 +10 ±10 — — 0.4 0.5 Typ — — — — — — — Max — — — +100 ±100 1.0 1.0 Unit V V V nA nA V V Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = +10 µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = +9V, V G1S = VDS = 0 VDS = 5V, VG2S = 4V I D = 100µA VDS = 5V, VG1S = 5V I D = 100µA Drain to source breakdown voltage V(BR)DSS Gate1 to source breakdown voltage V(BR)G1SS Gate2 to source breakdown voltage V(BR)G2SS Gate1 to source cutoff c...