BB405M

BB405M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-718A (Z) 2nd. Edition Dec. 1998 Features Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply voltage range; Applicable with 5V to 9V supply voltage. Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions. Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. Source 2. Drain 3. Gate2 4. Gate1 Notes: 1. Marking is “EX–”. 2. BB405M is individual type number of HITACHI BBFET. BB405M Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 12 +10 –0 ±10 25 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 12 +10 ±10 — — 0.4 0.4 2.3 1.1 — 10 — 23 — 24 — — — Typ — — — — — 0.7 0.7 2.8 1.5 0.017 15 13 28 28 28 28 1.4 1.4 Max — — — +100 ±100 1.0 1.0 3.5 1.9 0.04 20 — — — — — 1.9 — Unit V V V nA nA V V pF pF pF mA mA mS mS dB dB dB dB Test Conditions I D = 200µA, VG1S = VG2S = 0 I G1 = +10 µA, VG2S = VDS = 0 I G2 = ±10µA, VG1S = VDS = 0 VG1S = +9V, V G2S = VDS = 0 VG2S = ±9V, VG1S = VDS = 0 VDS = 5V, VG2S = 4V, ID = 100µA VDS = 5V, VG1S = 5V, ID = 100µA VDS = 5V, VG1 = 5V VG2S =4V, RG = 82...