UHF variable capacitance diode
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D050
BB417 UHF variable capacitance diode
Product specification Supersede...
Description
DISCRETE SEMICONDUCTORS
DATA SHEET
alfpage
M3D050
BB417 UHF variable capacitance diode
Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 May 03
Philips Semiconductors
Product specification
UHF variable capacitance diode
FEATURES Excellent linearity Hermetically sealed leaded glass SOD68 (DO-34) package C15: 3 pF; ratio: 3.5. APPLICATIONS Automatic frequency control VCO. DESCRIPTION The BB417 is a variable capacitance diode, fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD68 (DO-34) package. ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL IR rs Cd PARAMETER reverse current diode series resistance diode capacitance capacitance ratio CONDITIONS VR = 28 V; see Fig.3 VR = 28 V; Tj = 85 °C; see Fig.3 f = 470 MHz; note 1 VR = 4 V; f = 1 MHz; see Figs 2 and 4 VR = 15 V; f = 1 MHz; see Figs 2 and 4 C d ( 4V ) -------------------C d ( 15V ) Note 1. VR is the value at which Cd = 9 pF. f = 1 MHz MIN. − − − 8 2.2 2 TYP. − − − − − −
Cathode side indicated by a white band on a black body. k handbook, halfpage a
BB417
MAM159
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj PARAMETER continuous reverse voltage continuous forward current storage temperature operating junction temperature − − −55 −55 MIN. MAX. 30 20 +150 +100 V mA °C °C UNIT
MAX. 10 200 0.7...
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