Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio / low series resistance)
BB 535 Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners • Large capacitance ratio, low series resistance
T...
Description
BB 535 Silicon Variable Capacitance Diode
For UHF and TV/TR tuners Large capacitance ratio, low series resistance
Type BB 535
Marking Ordering Code white S Q62702-B580
Pin Configuration 1=C 2=A
Package SOD-323
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Thermal Resistance Junction - ambient Symbol Values 30 35 20 - 55 ... + 125 - 55 ... + 150 mA °C Unit V
VR VRM IF Top Tstg
RthJA
≤ 450
K/W
Semiconductor Group
1
Jan-08-1997
BB 535
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit
IR
10 200
nA
VR = 30 V, TA = 25 °C VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
17.5 14.01 2.05 1.9 18.7 15 2.24 2.1 6.7 8.9 0.55 2 20 16.1 2.4 2.3
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/CT25
6 7.5 9.8
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
CT1/CT28
8.2 ∆CT/CT 2.5 Ω 0.65 nH %
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching
VR = 1 ... 28 V, f = 1 MHz
Series resistance
rs Ls
VR = 3 V, f = 470 MHz
Series inductance
Semiconductor Group
2
Jan-08-1997
BB 535
Diode capacitance CT = f (VR) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR) f = 1MHz
10 -1 1/°C
20 pF
CT
16 14 12 10 8 6 4 2 0 0 5 10 15 20 V 30
TCc
10 -2
10 -3
10 -4
10 -5 0 10
10
1
V
VR
...
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