Silicon Variable Capcitance Diode
BB545 /BB565...
Silicon Variable Capcitance Diode
For UHF-TV-tuners High capacitance ratio Low series inductance ...
Description
BB545 /BB565...
Silicon Variable Capcitance Diode
For UHF-TV-tuners High capacitance ratio Low series inductance Low series resistance Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB545 BB565/-02V
1
2
Type BB545 BB565 BB 565-02V
Package SOD323 SCD80 SC79
Configuration single single single
LS (nH) 1.8 0.6 0.6
Marking white U CC C
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V
1
Nov-07-2002
BB545 /BB565...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT
Unit max. nA
typ.
IR 10 200
pF 18.5 13.2 1.85 1.8 20 14.8 2.07 2 10 7.2 21.5 16.4 2.28 2.2 11 8.1
%
Capacitance ratio
VR = 1 V, VR = 28 V, f = 1 MHz
CT1 /CT28 CT2 /CT25
9 6.3
-
Capacitance ratio
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance matching1)
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
CT/CT
rS
BB545
VR = 1V to 28V, f = 1 MHz, 4 diodes sequence,
0.5 0.7 0.6
2.5 1.5 2 -
BB565/ -02V
VR = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB565/ -02V Series resistance
VR = 3 V, f = 470 MHz
1For
-
details please re...
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