BB639

BB639/BB659... Silicon Variable Capacitance Diodes
For tuning of extended frequency band in VHF TV / VTR tuners
High capactance ratio
Low series inductance
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB639 BB659 1 2 Type BB639 BB659 Package SOD323 SCD80 Configuration single single LS (nH) Marking 1.8 yellow S 0.6 DE Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage ( R
5k ) Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 30 35 20 -55 ... 150 -55 ... 150 V mA °C 1 Nov-07-2002 BB639/BB659... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 pF 36 27.7 2.5 2.4 38.3 29.75 2.85 2.6 14.7 10.4 40 31.8 3.2 2.9 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 13.5 9.8 Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) BB639
CT/CT rS VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence 0.3 0.4 0.65 2.5 1 2 0.7 VR = 1 V, VR = 28 V, f = 1 MHz, 4 diode sequence BB659 VR = 1 V, VR = 28 V, f = 1 MHz, 7 diode sequence BB659 Series resistance VR = 5 V, f = 470 MHz 1For -  detai...