Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV / VTR tuners)
BB 639C
Silicon Variable Capacitance Diode • For tuning of extended frequency band in VHF TV / VTR tuners
Type BB 639C
...
Description
BB 639C
Silicon Variable Capacitance Diode For tuning of extended frequency band in VHF TV / VTR tuners
Type BB 639C
Marking Ordering Code yellow S Q62702-B695
Pin Configuration Package 1=C 2=A SOD-323
Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ) Forward current Operating temperature range Storage temperature Symbol Value 30 35 20 -55 ...+125 -55 ...+150 mA °C Unit V
VR VRM IF T op T stg
Semiconductor Group
1
Apr-30-1998
BB 639C
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 10 200 nA Unit
IR IR
-
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
AC characteristics Diode capacitance
CT
36 27 2.5 2.4 39 30.2 2.72 2.55 11.1 15.3 0.6 1.8 42 33.2 3.05 2.8 2.5 0.75 -
pF
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz
Capacitance ratio
CT2/C T25
9.5
-
VR = 2 V, VR = 25 V, f = 1 MHz
Capacitance ratio
CT1/C T28 13.5
∆CT/CT -
VR = 1 V, VR = 28 V, f = 1 MHz
Capacitance matching % Ω nH
VR = 1 V, VR = 28 V, f = 1 MHz
Series resistance
rs Ls
VR = 5 V, f = 470 MHz
Series inductance
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
2
Apr-30-1998
BB 639C
Diode capacitance CT = f (V R) f = 1MHz
Temperature coefficient of the diode capacitance TCc = f (VR)
10 -3
40
pF
1/°C
CT
30
T Cc
25 10 -4
20
15
10
5 10 -5 0 10
0 0
5
10
15
20
V
30
10
1
V
...
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