BB669

BB669 Silicon Tuning Diode
For VHF 2-Band-hyperband-TV-tuners
Very high capacitance ratio
Low series resistance
Extremely small plastic SMD package
Excellent uniformity and matching due to 2 1 "in-line" matching assembly procedure VPS05176 Type BB669 Marking 1 Pin Configuration 1=C 2=A Package SOD323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R
5k) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55... 150 -55... 150 mA °C Unit V 1 Jul-05-2001 BB669 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 8 V, f = 470 MHz Series inductance Ls 1.8 nH 1) In-line matching. For details please refer to Application Note 047 Symbol min. IR IR - Values typ. max. 10 200 Unit nA CT 51 39.6 2.6 2.5 CT2 /CT25 CT1 /CT28 14.5 18 56.5 43.4 2.8 2.7 15.5 20.9 0.85 61.5 47.2 3 2.9 17 23.3 2 - pF -
CT /CT rs %  2 Jul-05-2001 BB669 Diode capacitance CT = f (VR) f = 1MHz Reverse current IR = f (VR ) TA = Parameter 10 -9 60 pF 50 A 85°C 45 CT 40 35 30 25 20 15 10 5 0 0 4 8 12 16 2...