BB679

BB679... Silicon Variable Capacitance Diode
Designed for tuning wideband CATV-Tuners
High capacitance ratio C1V/C28V (typ. 18.3)
Low series resistance
Excellent uniformity and matching due to "in-line" matching assembly procedure BB679-02V 1 2 Type BB679-02V* Package SC79 Configuration single LS (nH) Marking 0.6 K * Preliminary Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R
5k ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ... 125 -55 ... 150 mA °C Unit V 1 Oct-25-2002 BB679... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 100 pF 43.5 33 2.55 2.4 47.5 36 2.75 2.6 18.3 13.1 0.6 51.5 38.8 2.95 2.8 20 14.5 2 0.8 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 16.5 CT2 /CT25 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz 12 - Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz
CT/CT rS Series resistance VR = 5 V, f = 470 MHz 1For  details please refer to Application Note 047. 2 Oct-25-2002 BB679... Diode capacitance CT = (VR ) f = 1MHz 10 2 Normalized diode capacitance C(TA) /C(25°C)= (TA ); f = 1MHz 1.04 CTA/C 25°C pF 1.02 ...