Silicon Epitaxial Planar Dual Capacitance Diode
BB804
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
Applications
Tuning ...
Description
BB804
Vishay Telefunken
Silicon Epitaxial Planar Dual Capacitance Diode
Features
D Common cathode
Applications
Tuning of separate resonant circuits, push–pull circuits in FM range, especially for car radios
94 8550
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V, f=1MHz VR=2V,8V, f=100MHz CD=38pF, f=100MHz CD=38pF, f=100MHz Type Symbol Min IR IR CD 42 CD 42 CD 43 CD 44 CD 45 CD 46 CD2/ CD8 1.65 rs Q 100 Typ Max 20 0.2 47.5 43.5 44.5 45.5 46.5 47.5 1.75 0.4 Unit nA mA pF pF pF pF pF pF Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 100 –55...+150 Unit V V mA °C °C
Group 0 Group 1 Group 2 Group 3 Group 4
Capacitance ratio Series resistance Figure of merit
1)
0.3 140
W
A packing unit (reel) contains diodes from one capacitance group only. Delivery of single capacitance groups available only on request.
Document Number 85554 Rev. 3, 01-Apr-99
www.vishay.de FaxBack +1-408-970-5600 1 (3)
BB804
Vishay Telefunken Dimensions in mm
14384
top view
14387
www.vishay.de FaxBack +1-408-970-5600 2 (3)
Document Number 85554 Rev. 3, 01-Apr-99
BB804
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and fu...
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