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BB 804
Silicon Variable Capacitance Diode
q q q q
BB 804
For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal Hifi tuning device when used in low-distortion, back-to-back configuration
Type BB 804
Ordering Code (tape and reel) Q62702-B372
Pin Configuration
Marking SF (see Characteristics for marking of capacitance subgroups)
Package SOT-23
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR VRM IF Top Tstg
Values 18 20 50 100 – 65 … + 150
Unit V mA ˚C
600
K/W
Semiconductor Group
1
10.94
BB 804
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Reverse current VR = 16 V VR = 16 V, TA = 60 ˚C Diode capacitance VR = 2 V, f = 1 MHz Capacitance ratio VR = 2 V, 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz Diode capacitance1) VR = 2 V, f = 1 MHz Subgroups: 0 1 2 3 4 Symbol min. IR – – CT CT2 CT8 rs Q TCC 42 1.65 – – – – – – 1.71 0.18 200 330 20 200 47.5 – – – – pF – Ω – ppm/K Values typ. max. nA Unit
CT 42 43 44 45 46 – – – – – 43.5 44.5 45.5 46.5 47.5
pF
1)
The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement.
Semiconductor Group
2
BB 804
Diode capacitance CT = f (VR) per diode, f = 1 MHz
Capacitance ratio CTref / CT = f (VR) per diode; Vref = 1 V, 2 V, f = 1 MHz
Temperature coefficient TCC = f (VR) per diode, f = 1 MHz
Semiconductor Group
3
.