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BB804

Infineon Technologies AG

Silicon Variable Capacitance Diode

BB804... Silicon Variable Capacitance Diode  For FM tuners  Monolithic chip with common cathode for perfect tracking ...



BB804

Infineon Technologies AG


Octopart Stock #: O-493595

Findchips Stock #: 493595-F

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BB804... Silicon Variable Capacitance Diode  For FM tuners  Monolithic chip with common cathode for perfect tracking of both diodes  Uniform "square law" characteristics  Ideal HiFi tuning device when used in low-distortion, back-to-back configuration BB804 3 D 1 D 2 1 2 Type BB804 Package SOT23 Configuration common cathode LS(nH) Marking 1.8 SF1/2/3* *For differences see next page Capacitance groups Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 18 20 50 -55 ... 125 -55 ... 150 V mA °C 1 Nov-07-2002 BB804... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 65 °C AC Characteristics Diode capacitance1) VR = 2 V, f = 1 MHz CT CT2 /CT8 rS Q TCC Unit max. nA 20 200 typ. - IR - 42 1.65 - 1.71 0.18 200 330 47.5 - pF Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz  Figure of merit f = 100 MHz, VR = 2 V Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz 1 ppm/K Capacitance groups at 2V , coded 1; 2 ; 3 CT/groups 1 2 3 C2V C2V min max 43pF 44.5pF 44pF 45.5pF 45pF 46.5pF The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packing unit (e.g. 8mm tape) contain diode...




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