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BB814

Siemens Group

Silicon Variable Capacitance Diode

BB 814 Silicon Variable Capacitance Diode q q q q BB 814 For FM radio tuners with extended frequency band High tuning...


Siemens Group

BB814

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BB 814 Silicon Variable Capacitance Diode q q q q BB 814 For FM radio tuners with extended frequency band High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching available Type BB 814 Ordering Code Pin Configuration (tape and reel) Q62702-B404 Marking SH (see Characteristics for marking of capacitance subgroups) Package SOT-23 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA ≤ Symbol VR VRM IF Top Tstg Values 18 20 50 – 55 … + 150 Unit V mA – 55 … + 125 ˚C 600 K/W Semiconductor Group 1 10.94 BB 814 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 60 ˚C Diode capacitance f = 1 MHz1) VR = 2 V VR = 8 V Capacitance ratio VR = 2 V, 8 V, f = 1 MHz Capacitance matching VR = 2 V, 8 V Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz 1) Values typ. max. Unit IR – – CT 43 19.1 CT2 CT8 ∆CT C T rS Q 2.05 – – – 44.75 20.8 2.15 – 0.18 200 46.5 22.7 2.25 3 – – – – 20 200 nA pF – % Ω – Capacitance groups, coded 1, 2 CT (2 V) 43 44.5 … 45 … 46.5 CT (8 V) Unit pF Code 1 2 19.1 … 21.95 pF 19.75 … 22.7 Semiconductor Group 2 BB 814 Diode capacitance CT = f (VR) per diode, f = 1 MHz Capacita...




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