Silicon Variable Capacitance Diodes
BB814...
Silicon Variable Capacitance Diodes
For FM radio tuners with extended
frequency band
High tuning ratio at ...
Description
BB814...
Silicon Variable Capacitance Diodes
For FM radio tuners with extended
frequency band
High tuning ratio at low supply voltage (car radio) Monolithic chip (common cathode) for perfect
dual diode tracking
Coded capacitance groups and group matching
available
BB814
3
D 1
D 2
1
2
Type BB814
Package SOT23
Configuration common cathode
LS(nH) Marking 1.8 SH1/2*
*For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltageForward current Operating temperature range Storage temperature VR VRM IF Top Tstg
Value 18 20 50 -55 ... 125 -55 ... 150
Unit V mA °C
1
Dec-04-2002
BB814...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 60 °C AC Characteristics Diode capacitance1)
VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz CT
Unit max. nA
typ.
IR 20 200
pF 43 19.1 44.75 20.8 2.15 0.18 200 46.5 22.7 2.25 3 %
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
CT2 /CT8
2.05 -
Capacitance matching2)
VR = 2 V, VR = 8 V, f = 1 MHz
CT/CT
rS Q
Series resistance
VR = 2 V, f = 100 MHz
Q factor
f = 100 MHz, VR = 2 V
1Capacitance
CT/groups C2V C2V C8V C8V
2For
groups at 2V and 8V, coded 1; 2 1 2 43pF 45pF 19.1pF 44.5pF 46.5pF 19.75pF
min max min max
21.95pF 22.7pF
details please refer to Application Note 047.
2
Dec-04-2002
BB814...
Diode capacita...
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