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BB824

Vishay Telefunken

Silicon Epitaxial Planar Dual Capacitance Diode

BB824 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode D High capacitance ra...


Vishay Telefunken

BB824

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BB824 Vishay Telefunken Silicon Epitaxial Planar Dual Capacitance Diode Features D Common cathode D High capacitance ratio Applications Tuning of separate resonant circuits, push–pull circuits in FM range, for car radios 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IF Tj Tstg Value 20 18 50 125 –55...+150 Unit V V mA °C °C Electrical Characteristics Tj = 25_C Parameter Reverse current Diode capacitance 1) Test Conditions VR=16V VR=16V, Tj=60°C VR=2V VR=8V Capacitance ratio Series resistance 1) Type Group 2 Group 3 Group 2 Group 3 VR=2V,8V, f=1MHz VR=2V, f=100MHz Symbol IR IR CD CD CD CD CD2/ CD8 rs Min Typ 42.5 43.7 17.5 18.0 2.25 Max 20 200 43.8 45 19.2 19.8 2.45 0.5 Unit nA nA pF pF pF pF W In the reverse voltage range of VR=2...8V for 4 diodes taped in sequence the max. deviation is 3%. Document Number 85556 Rev. 3, 01-Apr-99 www.vishay.de FaxBack +1-408-970-5600 1 (3) BB824 Vishay Telefunken Dimensions in mm 14384 top view 14387 www.vishay.de FaxBack +1-408-970-5600 2 (3) Document Number 85556 Rev. 3, 01-Apr-99 BB824 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distr...




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