BB837

BB 837 Silicon Tuning Diode Preliminary data Extented frequency range up to 2.8 GHz special design for use in TV-sat indoor units High capacitance ratio Type BB 837 Marking M Ordering Code Q62702-B0904 Pin Configuration Package 1=C 2=A SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R ≥ 5kΩ ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 55 ...+150 55 ...+150 mA °C Unit V Semiconductor Group 1 Mar-27-1998 BB 837 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1V to 28V, f = 1 MHz Capacitance matching VR = 1V to 28V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz Series inductance Ls 1.4 nH rs 1.5 Ω ∆CT/CT 5 % CT1/CT28 9.7 12.2 CT1/CT25 CT 6 0.45 6.6 0.55 0.54 12 7.2 0.65 pF Symbol min. IR IR - Values typ. max. 10 200 Unit nA Semiconductor Group 2 Mar-27-1998 BB 837 Diode capacitance CT = f (VR ) f = 1MHz 10 pF 8 CT 7 6 5 4 3 2 1 0 0 10 1 10 V VR Semiconductor Group 3 Mar-27-1998 ...