BB837

Silicon Tuning Diode For SAT tuners High capacitance ratio Low series resistance Excellent uniformity and matching due to "in-line" matching assembly procedure Pb-free (RoHS compliant) package BB837/BB857... BB837 BB857 BB857-02V  Type BB837 BB857* BB857-02V * Not for new design Package SOD323 SCD80 SC79 Configuration single single single Marking white M OO P Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage R ≥ 5kΩ VR VRM Forward current Operating temperature range Storage temperature IF Top TStg Value 30 35 20 -55 ...150 -55 ...150 Unit V mA °C 1 2014-03-31 BB837/BB857... Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR - - 10 - - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT 6 6.6 7.2 0.5 0.55 0.65 0.45 0.52 - Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1V ... 28V, f = 1 MHz, 7 diodes sequence CT1/CT25 10.2 CT1/CT28 9.7 ∆CT/CT - 12 12.7 - 5 Series resistance VR = 5 V, f = 470 MHz rS - 1.5 - 1For details please refer to Application Note 047 Unit nA pF - % Ω 2 2014-03-31 BB837/BB857... Diode capacitance CT = ƒ (VR) f = 1MHz Normalized diode capacitance C(TA)/C(25°C)= ƒ(TA); f = 1MHz CT CT...