Silicon Tuning Diode
BB867...
Silicon Tuning Diode
For SAT - Indor units High capacitance ratio C1V /C25V (typ.15.8) Low series inducta...
Description
BB867...
Silicon Tuning Diode
For SAT - Indor units High capacitance ratio C1V /C25V (typ.15.8) Low series inductance Excellent uniformity and matching due to
"in-line" matching assembly procedure
BB867-02V
1
2
Type BB867-02V*
* Preliminary
Package SC79
Configuration single
LS(nH) Marking 0.6 Y
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage(R 5k ) Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V
1
Nov-14-2002
BB867...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz
1For
Unit max. nA
typ.
IR 10 200
CT 8 0.5 0.45 CT1 /CT25 CT1 /CT28
CT/CT
pF 8.7 0.55 0.52 15.8 16.7 2.8 9.4 0.6 5 %
14 -
-
rS
details please refer to Application Note 047
2
Nov-14-2002
BB867...
Diode capacitance CT = (VR ) f = 1MHz
10
pF
8 7
CT
6 5 4 3 2 1 0 0 10
1
10
V
10
2
VR
3
Nov-14-2002
...
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