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BB914

Infineon Technologies AG

Silicon Variable Capacitance Diode

BB914... Silicon Variable Capacitance Diode  For FM radio tuner with extended frequency band  High tuning ratio at lo...


Infineon Technologies AG

BB914

File Download Download BB914 Datasheet


Description
BB914... Silicon Variable Capacitance Diode  For FM radio tuner with extended frequency band  High tuning ratio at low supply voltage (car radio)  Monolitic chip (common cathode) for perfect dual diode tracking  Good linearity for C- V curve  High figure of merit BB914 3 D 1 D 2 1 2 Type BB914 Package SOT23 Configuration common cathode LS(nH) Marking 1.8 SM Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage ( R  5k ) Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 18 20 50 -55 ... 125 -55 ... 150 V mA °C 1 Dec-04-2002 BB914... Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 85 °C AC Characteristics Diode capacitance VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz CT Unit max. nA 20 200 typ. - IR - pF 42.5 17.6 43.75 18.7 2.34 0.28 45 19.75 2.42 1.5 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2 /CT8 2.28 - Capacitance matching1) VR = 2 V, VR = 8 V, f = 1 MHz CT/CT rS Series resistance VR = 2 V, f = 100 MHz 1For  details please refer to Application Note 047. 2 Dec-04-2002 BB914... Diode capacitance CT = (VR ) f = 1MHz 100 pF Capacitance ratio CTref /CT =  (VR ) f = 1MHz 5 - 70 CTref / C T 80 4 3.5 3 2.5 2 1.5 1 0.5 1V CT 60 50 40 30 20 10 0 0 V 2V 3V 1 2 3 4 5 6 7 8 10 0 0 1 2 3 4 5 6 7 ...




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