Silicon Variable Capacitance Diode
BB914...
Silicon Variable Capacitance Diode
For FM radio tuner with extended
frequency band
High tuning ratio at lo...
Description
BB914...
Silicon Variable Capacitance Diode
For FM radio tuner with extended
frequency band
High tuning ratio at low supply voltage (car radio) Monolitic chip (common cathode)
for perfect dual diode tracking
Good linearity for C- V curve High figure of merit
BB914
3
D 1
D 2
1
2
Type BB914
Package SOT23
Configuration common cathode
LS(nH) Marking 1.8 SM
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit
Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature
VR VRM IF Top Tstg
18 20 50 -55 ... 125 -55 ... 150
V
mA °C
1
Dec-04-2002
BB914...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 85 °C AC Characteristics Diode capacitance
VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz CT
Unit max. nA 20 200
typ. -
IR
-
pF 42.5 17.6 43.75 18.7 2.34 0.28 45 19.75 2.42 1.5 %
Capacitance ratio
VR = 2 V, VR = 8 V, f = 1 MHz
CT2 /CT8
2.28 -
Capacitance matching1)
VR = 2 V, VR = 8 V, f = 1 MHz
CT/CT
rS
Series resistance
VR = 2 V, f = 100 MHz
1For
details please refer to Application Note 047.
2
Dec-04-2002
BB914...
Diode capacitance CT = (VR )
f = 1MHz
100
pF
Capacitance ratio CTref /CT = (VR )
f = 1MHz
5
-
70
CTref / C T
80
4 3.5 3 2.5 2 1.5 1 0.5
1V
CT
60 50 40 30 20 10 0 0
V
2V 3V
1
2
3
4
5
6
7
8
10
0 0
1
2
3
4
5
6
7
...
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