BBY52

Silicon Tuning Diodes Ηigh Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO`s in mobile communications equipment Pb-free (RoHS compliant) package BBY52... BBY52-02L BBY52-02W  Type BBY52-02L BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless single Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg LS(nH) 0.4 0.6 Marking K KK Value 7 20 -55 ... 150 -55 ... 150 Unit V mA °C 1 2011-06-14 BBY52... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 6 V VR = 6 V, TA = 85 °C IR - - 10 - - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT 1.4 1.85 2.2 0.95 1.5 2 0.9 1.35 1.75 0.85 1.15 1.45 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT1/CT4 rS 1.1 1.6 2.1 - 0.9 1.7 Unit nA pF Ω 2 2011-06-14 BBY52... CT IR Diode capacitance CT = ƒ (VR) f = 1MHz 2.6 pF 2.4 2.3 2.2 2.1 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 10 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V 4 VR Reverse current IR = ƒ(VR) TA = 25°C 45 pA 35 30 25 20 15 10 5 00 1 2 3 4 5 V 7 VR 3 2011-06-14 Package SCD80 Package Outline 0.8 ±0.1 2 Cathode marking 1 0.3 ±0.05 1.7 ±0.1 10˚MAX. 0.2 M A 0.13 +0.05 -0.03 A 7˚ ...