Document
BBY55...
Silicon Tuning Diodes
Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread
BBY55-02V BBY55-02W BBY55-03W
1
2
Type BBY55-02V BBY55-02W BBY55-03W
Package SC79 SCD80 SOD323
Configuration single single single
LS(nH) 0.6 0.6 1.8
Marking 7 77 7 white
Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol VR IF Top Tstg Value 16 20 -55 ... 150 -55 ... 150 Unit V mA °C
1
Nov-14-2002
BBY55...
Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 15 V VR = 15 V, TA = 85 °C
AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz rS 0.15 0.4 CT2 /CT10 CT 17.5 14 11.6 10 5.5 2 18.6 15 12.6 11 6 2.5 19.6 16 13.6 12 6.5 3 pF
Unit max. nA
typ.
IR 3 100
2
Nov-14-2002
BBY55...
Diode capacitance CT = (VR )
f = 1MHz
Capacitance change C = (TA)
f = 1 MHz
4
% 1V 2V
30 pF
24 22 2
6V 10V
∆C
CT
20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10
V
1
0
-1
-2
-3
C=(C(TA)-C(25°C))/C(25°C)
-30 -10 10 30 50 70
°C
14
-4 -50
110
VR
TA
Series resistance r S= (V R) f = 470 MHz
0.5
Reverse current IR = (VR) TA = Parameter
10 -9
A Ohm 80°C
10 0.3
-10
IR
rs
60°C
25°C
0.2 10 -11
0.1
0 0
2
4
6
8
10
V
14
10 -12 0
2
4
6
8
10
12
14
V
18
VR
VR
3
Nov-14-2002
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